Interstitial oxygen in germanium and silicon

نویسندگان

  • Emilio Artacho
  • Félix Ynduráin
  • Bernard Pajot
  • Carlos P. Herrero
  • Kohei M. Itoh
  • Eugene E. Haller
چکیده

The microscopic structure of interstitial oxygen in germanium and its associated dynamics are studied both experimentally and theoretically. The infrared absorption spectrum is calculated with a dynamical matrix model based on first-principles total-energy calculations describing the potential energy for the nuclear motions. Spectral features and isotope shifts are calculated and compared with available experimental results. From new spectroscopic data on natural and on quasimonoisotopic germanium samples, new isotope shifts have been obtained and compared with the theoretical predictions. The low-energy spectrum is analyzed in terms of a hindered rotor model. A fair understanding of the center is achieved, which is then compared with interstitial oxygen in silicon. The oxygen atom is nontrivially quantum delocalized both in silicon and in germanium, but the physics is shown to be very different: while the Si-O-Si quasimolecule is essentially linear, the Ge-O-Ge structure is puckered. The delocalization in a highly anharmonic potential well of oxygen in silicon is addressed using path-integral Monte Carlo simulations, for comparison with the oxygen rotation in germanium. The understanding achieved with this new information allows us to explain the striking differences between both systems, in both the infrared and the far-infrared spectral regions, and the prediction of the existence of hidden vibrational modes, never directly observed experimentally, but soundly supported by the isotope-shift analysis. @S0163-1829~97!08631-1#

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Theory of Interstitial Oxygen in Silicon and Germanium Emilio Artacho and Felix Yndurain

Abstract. The interstitial oxygen centers in silicon and germanium are reconsidered and compared in an analysis based on the first-principles total-energy determination of the potential-energy surface of the centers, and a calculation of their respective low energy excitations and infrared absorption spectra. The total-energy calculations reveal unambiguously that interstitial oxygen is quantum...

متن کامل

The Interaction of Hydrogen with Deep Level Defects in Silicon

6 Self-interstitial–hydrogen complexes in silicon and germanium . . . . . . . . 21 6.1 Experimental work on IH2 defects . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6.2 The silicon self-interstitial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6.3 Interstitial complexes with one hydrogen atom . . . . . . . . . . . . . . . . . . . 23 6.4 Di-hydrogenated split intersti...

متن کامل

Vibrational lifetimes and isotope effects of interstitial oxygen in silicon and germanium.

Decay dynamics of local vibrational modes provides unique information about energy relaxation processes to solid-state phonon bath. In this Letter the lifetimes of the asymmetric stretch mode of interstitial 16O and 17O isotopes in Si are measured at 10 K directly by time-resolved, transient bleaching spectroscopy to be 11.5 and 4.5 ps, respectively. A calculation of the three-phonon density of...

متن کامل

Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon

Related Articles Dopant concentration imaging in crystalline silicon wafers by band-to-band photoluminescence J. Appl. Phys. 110, 113712 (2011) About the internal pressure in cavities derived from implantation-induced blistering in semi-conductors J. Appl. Phys. 110, 114903 (2011) Silicon nanocrystals doped with substitutional or interstitial manganese Appl. Phys. Lett. 99, 193108 (2011) Effect...

متن کامل

SIMS Analysis of Oxygen Impurity levels when using Point-Of-Use Hydrogen Purification in a Silicon Germanium epitaxial deposition process for a Strained Silicon application

A Pall Maxi-Gaskleen purifier of the Pall AresKleen family of gas purification products was evaluated for its efficacy in reducing oxygen impurities in a silicon germanium (SiGe) deposition process for a strained silicon application at a major IDM in the US. Impact on process parameters such as hydrogen pre-bake temperature and interfacial/within-film oxygen concentration were studied as a func...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1997